107 silicon npn triple diffused planar transistor (complement to type 2sa1693) application : audio and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 120 80 6 6 3 60(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) f t c ob ratings 10 max 10 max 80 min 50 min * 1.5 max 20 typ 110 typ unit m a m a v v mhz pf conditions v cb =120v v eb =6v i c =50ma v ce =4v, i c =2a i c =2a, i b =0.2a v ce =12v, i e =?.5a v cb =10v, f=1mhz 2sc4466 (ta=25?) (ta=25?) n typical switching characteristics (common emitter) v cc (v) 30 r l ( ) 10 i c (a) 3 v bb2 (v) ? i b2 (a) ?.3 t on ( m s) 0.16 typ t stg ( m s) 2.60 typ t f ( m s) 0.34 typ i b1 (a) 0.3 v bb1 (v) 10 external dimensions mt-100(to3p) 15.6 ?.4 9.6 19.9 ?.3 4.0 2.0 5.0 ?.2 1.8 ?.2 ?.1 2 3 1.05 +0.2 -0.1 20.0min 4.0max be 5.45 ?.1 5.45 ?.1 c 4.8 ?.2 0.65 +0.2 -0.1 1.4 2.0 ?.1 a b weight : approx 6.0g a. part no. b. lot no. i c v ce characteristics (typical) h fe i c characteristics (typical) h fe i c temperature characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat) i b characteristics (typical) pc ta derating safe operating area (single pulse) f t i e characteristics (typical) 0 3 2 1 0 0.5 1.0 1.5 base current i b (a) collector-emitter saturation voltage v ce(sat) (v) i c =6a 2a 4a 0 6 4 2 02 1 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) 25?c (case temp) ?0?c (case temp) 60 40 20 3.5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 5 10 100 50 0.1 1 0.5 10 20 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling dc 10ms 1ms 100ms 0.02 0.1 1 0.5 5 6 30 50 100 300 collector current i c (a) dc current gain h fe (v ce =4v) typ 0 0 2 4 6 2 134 collector-emitter voltage v ce (v) collector current i c (a) 80ma 50ma 30ma 20ma 150ma 100ma i b =10ma 200ma (v ce =4v) 0.02 0.5 6 5 1 20 50 200 100 0.1 collector current i c (a) dc current gain h fe 125?c 25?c ?0?c ?.02 ?.1 ? ? 0 20 10 40 30 cut-off frequency f t (mh z ) (v ce =12v) emitter current i e (a) typ 0.3 1 5 0.5 1 10 100 1000 2000 time t(ms) transient thermal resistance q j-a (?c/w) * h fe rank o(50 to100), p(70 to140), y(90 to180)
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